Advanced Technology Insight | Highlights from IEEE IEDM
At Nexteck, we stay closely tuned to cutting-edge semiconductor advancements. The 70th IEEE IEDM (International Electron Devices Meeting) highlighted transformative innovations in logic device architecture:
Nanosheet-Based Transistors & 3D Complementary FETs (CFETs)
Nanosheets, a next-generation Gate-All-Around (GAA) architecture, provide enhanced electrostatic control and high drive current with variable channel widths—positioned to replace conventional FinFETs.
CFETs go further by stacking n-FET and p-FET nanosheets vertically, enabling high-density 3D integration without increasing footprint—paving the way for future Moore’s Law scaling.
Nexteck continues to invest in advanced materials and semiconductor packaging to support the industry’s evolution.